Kingston Technology ValueRAM memory module 4 GB 1 x 4 GB DDR3L 1600 MT/s 204-pin SO-DIMM

Kingston Technology ValueRAM memory module 4 GB 1 x 4 GB DDR3L 1600 MT/s 204-pin SO-DIMM

Kingston FURY

Ratings: 4.7/5 (3)

GBP 50.17 There is one offer for this product.

<div> <span style="font-size:16px;"><strong>kvr16ls11/4</strong></span></div> <div> <strong>4gb 1rx8 512m x 64-bit pc3l-12800 cl11 204-pin sodimm</strong></div> <div> </div> <div> valueram&#39;s 512m x 64-bit (4gb) ddr3l-1600 cl11 sdram (synchronous dram) 1rx8 low voltage memory module based on eight 512m x 8-bit fbga components. the spd is programmed to jedec standard latency ddr3-1600 timing of 11-11-11 at 1.35v or 1.5v. this</div> <div> 204-pin sodimm uses gold contact fingers.</div> <div> </div> <div> </div> <div> </div> <div> <u><strong>features</strong></u></div> <div> </div> <div> &bull; jedec standard 1.35v (1.28v ~ 1.45v) and 1.5v (1.425v ~ 1.575v) power supply</div> <div> &bull; vddq = 1.35v (1.28v ~ 1.45v) and 1.5v (1.425v ~ 1.575v)</div> <div> &bull; 800mhz fck for 1600mb/sec/pin</div> <div> &bull; 8 independent internal bank</div> <div> &bull; programmable cas latency: 11 10 9 8 7 6</div> <div> &bull; programmable additive latency: 0 cl - 2 or cl - 1 clock</div> <div> &bull; 8-bit pre-fetch</div> <div> &bull; burst length: 8 (interleave without any limit sequential with starting address &ldquo;000&rdquo; only) 4 with tccd = 4 which does not allow seamless read or write [either on the fly using a12 or mrs]</div> <div> &bull; bi-directional differential data strobe</div> <div> &bull; internal(self) calibration : internal self calibration through zq pin (rzq : 240 ohm &plusmn; 1%)</div> <div> &bull; on die termination using odt pin</div> <div> &bull; average refresh period 7.8us at lower than tcase 85&deg;c 3.9us at 85&deg;c &lt; tcase &lt; 95&deg;c</div> <div> &bull; asynchronous reset</div> <div> &bull; pcb: height 1.18&rdquo; (30mm) double sided component</div>

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Specifications

Features

CAS latency
11
Internal memory
4 GB
Memory layout (modules x size)
1 x 4 GB
Internal memory type
DDR3L
Memory data transfer rate
1600 MT/s
Component for
Laptop
Memory form factor
204-pin SO-DIMM
ECC
No
Memory bus
64 bit
Buffered memory type
Unregistered (unbuffered)
Memory voltage
1.35,1.5 V
Module configuration
512M X 64
Row cycle time
48.125 ns
Refresh row cycle time
260 ns
Row active time
35 ns
Lead plating
Gold

Operational conditions

Operating temperature (T-T)
0 - 85 °C
Storage temperature (T-T)
-55 - 100 °C

Weight & dimensions

Width
67.6 mm
Height
30 mm

Logistics data

Harmonized System (HS) code
84733020

Other features

Chips organisation
X8
Country of origin
Taiwan
Bus clock rate
1600 MHz
Error indication
No
Memory layout
1 x 4096 MB
Internal memory
4096 MB

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