Kingston Technology ValueRAM memory module 4 GB 1 x 4 GB DDR3L 1600 MT/s 204-pin SO-DIMM
Kingston FURYRatings: 4.7/5 (3)
GBP 50.17 There is one offer for this product.
<div> <span style="font-size:16px;"><strong>kvr16ls11/4</strong></span></div> <div> <strong>4gb 1rx8 512m x 64-bit pc3l-12800 cl11 204-pin sodimm</strong></div> <div> </div> <div> valueram's 512m x 64-bit (4gb) ddr3l-1600 cl11 sdram (synchronous dram) 1rx8 low voltage memory module based on eight 512m x 8-bit fbga components. the spd is programmed to jedec standard latency ddr3-1600 timing of 11-11-11 at 1.35v or 1.5v. this</div> <div> 204-pin sodimm uses gold contact fingers.</div> <div> </div> <div> </div> <div> </div> <div> <u><strong>features</strong></u></div> <div> </div> <div> • jedec standard 1.35v (1.28v ~ 1.45v) and 1.5v (1.425v ~ 1.575v) power supply</div> <div> • vddq = 1.35v (1.28v ~ 1.45v) and 1.5v (1.425v ~ 1.575v)</div> <div> • 800mhz fck for 1600mb/sec/pin</div> <div> • 8 independent internal bank</div> <div> • programmable cas latency: 11 10 9 8 7 6</div> <div> • programmable additive latency: 0 cl - 2 or cl - 1 clock</div> <div> • 8-bit pre-fetch</div> <div> • burst length: 8 (interleave without any limit sequential with starting address “000” only) 4 with tccd = 4 which does not allow seamless read or write [either on the fly using a12 or mrs]</div> <div> • bi-directional differential data strobe</div> <div> • internal(self) calibration : internal self calibration through zq pin (rzq : 240 ohm ± 1%)</div> <div> • on die termination using odt pin</div> <div> • average refresh period 7.8us at lower than tcase 85°c 3.9us at 85°c < tcase < 95°c</div> <div> • asynchronous reset</div> <div> • pcb: height 1.18” (30mm) double sided component</div>
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Quzo UnknownGBP 50.17
Specifications
Features
- CAS latency
- 11
- Internal memory
- 4 GB
- Memory layout (modules x size)
- 1 x 4 GB
- Internal memory type
- DDR3L
- Memory data transfer rate
- 1600 MT/s
- Component for
- Laptop
- Memory form factor
- 204-pin SO-DIMM
- ECC
- No
- Memory bus
- 64 bit
- Buffered memory type
- Unregistered (unbuffered)
- Memory voltage
- 1.35,1.5 V
- Module configuration
- 512M X 64
- Row cycle time
- 48.125 ns
- Refresh row cycle time
- 260 ns
- Row active time
- 35 ns
- Lead plating
- Gold
Operational conditions
- Operating temperature (T-T)
- 0 - 85 °C
- Storage temperature (T-T)
- -55 - 100 °C
Weight & dimensions
- Width
- 67.6 mm
- Height
- 30 mm
Logistics data
- Harmonized System (HS) code
- 84733020
Other features
- Chips organisation
- X8
- Country of origin
- Taiwan
- Bus clock rate
- 1600 MHz
- Error indication
- No
- Memory layout
- 1 x 4096 MB
- Internal memory
- 4096 MB
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